 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features * High breakdown voltage. * High reliability (Adoption of HVP process). * Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5417] 10.0 3.5 3.2 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25C Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO220FI (LS) 2.4 Ratings 1200 600 9 3 6 2 25 150 -55 to +150 0.6 0.7 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf Conditions VCB=600V, IE=0 VCE=1200V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.1A VCE=5V, IC=1.0A IC=1.5A, IB1=0.3A, IB2=-0.6A IC=1.5A, IB1=0.3A, IB2=-0.6A Ratings min typ max 10 1.0 1.0 1.0 1.5 50 2.5 0.15 Unit A mA V mA V V 600 30 10 40 s s SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51598TS (KOTO) TA-1043 No.5817-1/4 2SC5417 Switching Time Test Circuit RC IB1 VOUT IB2 VCC 0.9 VOUT VOUT 0.1 VOUT tstg tf IB1 IB2 5 I C - VCE 6A 1.8A 1.4A 1. 2.0A 4 I C - VBE VCE =5V Collector Current, IC - A Collector Current, IC - A 4 1.2A 1.0A 0.8A 0.6A 0.4A 3 3 120 1 0 0 0.2 0.4 0.6 C 25C 0.8 2 0.1A 1 0.05A 0 0 IB = 0 1 2 3 4 5 6 7 8 9 10 -40C 1.0 Ta= 2 0.2A 1.2 1.4 Collector-to-Emitter Voltage, VCE - V Collector-to-Emitter Saturation Voltage, VCE(sat) - V 100 7 5 Base-to-Emitter Voltage, VBE - V 10 7 IC /IB =5 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 hFE - I C VCE =5V VCE(sat) - I C Ta=120C 25C DC Current Gain, hFE 3 2 10 7 5 3 2 1.0 25C -40 C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current,IC - A Base-to-Emitter Saturation Voltage, VBE(sat) - V 10 I /I =5 7 CB 5 3 2 Collector Current,IC - A 10 7 VBE(sat) - I C Switching Time, SW Time - s SW Time - I C tstg VCC =200V IC /IB1=5 IB2 /IB1 =2 R load 5 3 2 1.0 7 5 3 2 0.1 7 5 7 1.0 7 5 Ta=-40C tf 25C 3 2 0.1 7 0.01 120C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.1 2 3 5 7 1.0 2 Ta=1 3 -40C 20C 5 Collector Current,IC - A Collector Current,IC - A S No.5817-2/4 2SC5417 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 SW Time - I B2 tstg VCC =200V IC =1.5A IB1 =0.3A R load 10 7 5 Forward Bias ASO I CP IC s 1m ms 10 PT<50s s 0 10 Switching Time, SW Time - s Collector Current,IC - A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 30 s D C op er at io n tf 0.1 2 3 5 7 1.0 2 3 0.01 Tc=25C 7 1Pulse 5 23 5 7 10 2 3 5 7 100 2 3 5 7 1000 Base Current, IB2 - A 10 7 Collector-to-Emitter Voltage, VCE - V 3 Reverse Bias A S O Collector Dissipation, PC - W P C - Ta 5 Collector Current,IC - A 3 2 2 1.0 7 5 3 No he at s ink 1 L=200H Tc=25C 1 pulse 2 IB2 =-1A 0.1 5 7 100 2 3 5 7 1000 2 3 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter, VCE - V 30 Ambient Temperature, Ta - C P C - Tc Collector Dissipation, PC - W 25 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc - C No.5817-3/4 2SC5417 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. No.5817-4/4 |
Price & Availability of 2SC5417
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |